photodiode si photodiode suitable for lead-free solder reflow, operating/storage temperature: -40 to +125 ?c S9674 S9674 is a highly reliable photodiode designed for in-vehicle applications and is compatible with lead-free solder reflow proce sses. the newly developed small, thin leadless package allows reducing the mount area on a printed circuit board. preliminary data dec. 2006 features l suitable for lead-free solder reflow (reflow peak temperature: 260 ?c, jedec level 5a) l surface mount type, small and thin leadless package l high reliability for automotive applications operating/storage temperature: -40 to +125 ?c l active area: 2 ?2 mm l high sensitivity: 0.7 a/w ( =960 nm) applications l automotive devices (for rain sensor and sun sensor, etc.) 1 absolute maximum ratings parameter symbol value unit reverse voltage v r max. 10 v operating temperature topr -40 to +125 c storage temperature tstg -40 to +125 c electrical and optical characteristics (ta=25 c) parameter symbol condition min. typ. max. unit spectral response range - 320 to 1100 - nm peak sensitivity wavelength p - 960 - nm photo sensitivity s = p0.60.7-a/w short circuit current isc 100 lx , 2856 k - 4.8 - a temperature coefficient of isc - - +0.1 - %/c half-value angle - - 60 - degree dark current i d v r =5 v - 0.005 1 na temperature coefficient of i d t cid - 1.12 - times/c rise time tr v r =0 v, r l =1 k ? 10 to 90 % -2-s terminal capacitance ct v r =0 v, f=10 khz - 450 - pf
si photodiode S9674 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2007 hamamatsu photonics k.k. cat. no. kspd1070e01 mar. 2007 dn 2 5.7 4.6 (4.1) 3.1 (0.55) 0.85 1.4 0.2 4.0 2.5 0.8 active area (2 2) cathode index photosensitive surface photosensitive surface (2 ) r0.3 recommended land pattern tolerance unless otherwise noted: 0.15, 2 ? (6.5) (3.2) (2.8) 3.3 1.0 1.0 reverse voltage (v) terminal capacitance 0.1 1 10 10 pf 100 pf 1 nf 10 nf 100 (typ. ta=25 ? c) dimensional outline (unit: mm) spectral response wavelength (nm) (typ. ta=25 ? c) photo sensitivity (a/w) 600 200 800 400 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1000 1200 qe=100 % kspdb0248ea dark current vs. reverse voltage reverse voltage (v) dark current 0.01 0.1 1 10 100 fa 1 pa 10 pa 10 na 1 na 100 pa 100 (typ. ta=25 ? c) terminal capacitance vs. reverse voltage kspdb0251ea directivity relative sensitivity (%) 100 0 20 40 60 80 20 90 ? 90 ? 80 ? 70 ? 60 ? 50 ? 40 ? 30 ? 20 ? 10 ? 0 ? 10 ? 20 ? 30 ? 40 ? 50 ? 60 ? 70 ? 80 ? 40 60 80 100 (typ. ta=25 ? c, light source: tungsten lamp) kspdb0249ea kspdb0250ea kspda0179ea
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